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Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
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Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation
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Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation | SpringerLink
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Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
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Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation | SpringerLink
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